Electron-electron scattering in a double quantum dot: Effective mass approach.
Identifieur interne : 001A08 ( Main/Exploration ); précédent : 001A07; suivant : 001A09Electron-electron scattering in a double quantum dot: Effective mass approach.
Auteurs : RBID : pubmed:20849183English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Antimony, Cadmium Compounds, Indium, Selenium Compounds, Silicon Dioxide.
- Electrons, Quantum Dots.
Abstract
We present a theoretical description of the first-order scattering of interacting electrons and holes in a double quantum dot. Assuming infinitely high walls, strong confinement, and a two-band approximation, we derive general expressions for the two-particle matrix elements of the screened Coulomb potential. We also determine the selection rules for different scattering channels and consider special cases where the corresponding matrix elements can be represented by simple analytical expressions. Numerical calculations of the matrix elements and an analysis of their dependence on the geometrical and material parameters of the double quantum dot have also been performed.
DOI: 10.1063/1.3477766
PubMed: 20849183
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Electron-electron scattering in a double quantum dot: Effective mass approach.</title><author><name sortKey="Kruchinin, S Yu" uniqKey="Kruchinin S">S Yu Kruchinin</name><affiliation wicri:level="1"><nlm:affiliation>Saint-Petersburg State University of Information Technologies, Mechanics and Optics, 49 Kronverksky Avenue, 197101 St. Petersburg, Russia. stanislav.kruchinin@gmail.com</nlm:affiliation><country xml:lang="fr">Russie</country><wicri:regionArea>Saint-Petersburg State University of Information Technologies, Mechanics and Optics, 49 Kronverksky Avenue, 197101 St. Petersburg</wicri:regionArea></affiliation></author><author><name sortKey="Fedorov, A V" uniqKey="Fedorov A">A V Fedorov</name></author><author><name sortKey="Baranov, A V" uniqKey="Baranov A">A V Baranov</name></author><author><name sortKey="Perova, T S" uniqKey="Perova T">T S Perova</name></author><author><name sortKey="Berwick, K" uniqKey="Berwick K">K Berwick</name></author></titleStmt><publicationStmt><date when="2010">2010</date><idno type="doi">10.1063/1.3477766</idno><idno type="RBID">pubmed:20849183</idno><idno type="pmid">20849183</idno><idno type="wicri:Area/Main/Corpus">001779</idno><idno type="wicri:Area/Main/Curation">001779</idno><idno type="wicri:Area/Main/Exploration">001A08</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Antimony (chemistry)</term><term>Cadmium Compounds (chemistry)</term><term>Electrons</term><term>Indium (chemistry)</term><term>Quantum Dots</term><term>Selenium Compounds (chemistry)</term><term>Silicon Dioxide (chemistry)</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Antimony</term><term>Cadmium Compounds</term><term>Indium</term><term>Selenium Compounds</term><term>Silicon Dioxide</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Electrons</term><term>Quantum Dots</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We present a theoretical description of the first-order scattering of interacting electrons and holes in a double quantum dot. Assuming infinitely high walls, strong confinement, and a two-band approximation, we derive general expressions for the two-particle matrix elements of the screened Coulomb potential. We also determine the selection rules for different scattering channels and consider special cases where the corresponding matrix elements can be represented by simple analytical expressions. Numerical calculations of the matrix elements and an analysis of their dependence on the geometrical and material parameters of the double quantum dot have also been performed.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">20849183</PMID><DateCreated><Year>2010</Year><Month>09</Month><Day>20</Day></DateCreated><DateCompleted><Year>2011</Year><Month>01</Month><Day>04</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1089-7690</ISSN><JournalIssue CitedMedium="Internet"><Volume>133</Volume><Issue>10</Issue><PubDate><Year>2010</Year><Month>Sep</Month><Day>14</Day></PubDate></JournalIssue><Title>The Journal of chemical physics</Title><ISOAbbreviation>J Chem Phys</ISOAbbreviation></Journal><ArticleTitle>Electron-electron scattering in a double quantum dot: Effective mass approach.</ArticleTitle><Pagination><MedlinePgn>104704</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1063/1.3477766</ELocationID><Abstract><AbstractText>We present a theoretical description of the first-order scattering of interacting electrons and holes in a double quantum dot. Assuming infinitely high walls, strong confinement, and a two-band approximation, we derive general expressions for the two-particle matrix elements of the screened Coulomb potential. We also determine the selection rules for different scattering channels and consider special cases where the corresponding matrix elements can be represented by simple analytical expressions. Numerical calculations of the matrix elements and an analysis of their dependence on the geometrical and material parameters of the double quantum dot have also been performed.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Kruchinin</LastName><ForeName>S Yu</ForeName><Initials>SY</Initials><Affiliation>Saint-Petersburg State University of Information Technologies, Mechanics and Optics, 49 Kronverksky Avenue, 197101 St. Petersburg, Russia. stanislav.kruchinin@gmail.com</Affiliation></Author><Author ValidYN="Y"><LastName>Fedorov</LastName><ForeName>A V</ForeName><Initials>AV</Initials></Author><Author ValidYN="Y"><LastName>Baranov</LastName><ForeName>A V</ForeName><Initials>AV</Initials></Author><Author ValidYN="Y"><LastName>Perova</LastName><ForeName>T S</ForeName><Initials>TS</Initials></Author><Author ValidYN="Y"><LastName>Berwick</LastName><ForeName>K</ForeName><Initials>K</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>J Chem Phys</MedlineTA><NlmUniqueID>0375360</NlmUniqueID><ISSNLinking>0021-9606</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Cadmium Compounds</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Selenium Compounds</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>7631-86-9</RegistryNumber><NameOfSubstance>Silicon Dioxide</NameOfSubstance></Chemical><Chemical><RegistryNumber>9IT35J3UV3</RegistryNumber><NameOfSubstance>Antimony</NameOfSubstance></Chemical><Chemical><RegistryNumber>A7F646JC5C</RegistryNumber><NameOfSubstance>cadmium selenide</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Antimony</DescriptorName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Cadmium Compounds</DescriptorName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Electrons</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Quantum Dots</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Selenium Compounds</DescriptorName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Silicon Dioxide</DescriptorName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2010</Year><Month>9</Month><Day>21</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2010</Year><Month>9</Month><Day>21</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2011</Year><Month>1</Month><Day>5</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1063/1.3477766</ArticleId><ArticleId IdType="pubmed">20849183</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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